Robustness of MW-Level IGBT modules against gate oscillations under short circuit events
نویسندگان
چکیده
Article history: Received 26 May 2015 Received in revised form 30 June 2015 Accepted 3 July 2015 Available online xxxx
منابع مشابه
Yaqub, Imran and Li, Jianfeng and Johnson, Christopher Mark (2015) Dependence of overcurrent failure modes
Insulated gate bipolar transistor (IGBT) modules which can fail to short circuit mode have great of applications in electricity network related fields. Single IGBT samples have been constructed with the standard Al wire bonding, flexible printed circuit board (PCB) interconnect and sandwich structure technologies. The overcurrent failure modes of the constructed IGBT samples have been tested un...
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عنوان ژورنال:
- Microelectronics Reliability
دوره 55 شماره
صفحات -
تاریخ انتشار 2015